I migrated here in the US (specifically in San Bernardino, CA). Quick Intro: I'm a graduate electrical engineer; honestly, I really don't have that much experience and not even a decent internship experience due to covid, resulting in an online OJT. Do you think doing an internship here in the US is the way to go? If yes, what kind of advice can you give when applying like tips and what things should i look into, and what kind of internship should I start with? Thank you, any advice are appreciated :))

Hello! Someone suggested this "If the MOSFET is put into diode connection mode (connect the gate to the drain), you can force a small current (I recommend 1 uA–10 uA; 1 mA would probably be OK; 100 mA would result in significant power dissipation and could influence the results) and record Vds (which is equal to Vgs in this configuration).” There are just some questions i had in mind. *Is it possible to connect the gate and drain on a breadboard to put the MOSFET into diode connection mode? *How to force a small current in the drain. Is voltage divider will be enough? *Is it still possible to apply voltage source after putting it into a diode connection? Also, what is the expected measurement at the Vds terminal. If there will be no voltage source, will it be in the range of 0.1 to 1 V increase? *Why should the MOSFET be connected into a diode?

*Can a MOSFET handle low dosage for example, Cs-137 (666 keV)

Hello, we are making a thesis where we use MOSFETs as an alternative radiation detector. So to explain it, it works when the mosfet is irradiated with an external radiation source; its voltage threshold increases, which will be used to determine the radiation dose. I'm currently asking for help on how we measure the voltage threshold. BTW, we are using an n-channel MOSFET (model: IRFP250NPbF). Also in the datasheet provided by the manufacturer, it says here VGS(th)/Gate Threshold Voltage Min: 2.0 ––– Max: 4.0 V. There is a condition here with VDS = VGS, ID = 250 A. Does this mean that to measure the VGS, we need to first satisfy the conditions? To measure the voltage threshold, what node will we use to measure the VGS (th)? Is it at the drain to the source terminal or still at the gate to the source terminal? Feel free to share your thoughts, if you have any. I would also like to add that we have already tried to supply a voltage at the gate with respect to the source terminal. We use a 4 V supply voltage, and when we tried to measure the VDS (drain to source voltage), there was a voltage drop, so we've got a 3.5 V. Also, we are using an Arduino to measure its voltage and a multimeter for checking.